Xu, Y.; He, K. T.; Schmucker, S. W.; Guo, Z.; Koepke, J. C.; Wood, J. D.; Lyding, J. W.; Aluru, N. R.
NANO LETTERS Volume: 11 Issue: 7 2011, Pages: 2735-2742
The paper have performed scanning tunneling microscopy and spectroscopy (STM/STS) measurements as well as ab initio calculations for graphene monolayers on clean and hydrogen(H)-passivated silicon (100) (Si(100)/H) surfaces. The work represents the first demonstration of successful and reproducible depassivation of hydrogen from beneath monolayer graphene flakes on Si(100)/H by electron-stimulated desorption. The study demonstrated that graphene interacts differently with the clean and H-passivated Si(100) surfaces. The Si(100)/H surface does not perturb the electronic properties of graphene, whereas the interaction between the clean Si(100) surface and graphene changes the electronic states of graphene significantly.
