Gu, Fuxing; Yang, Zongyin; Yu, Huakang; Xu, Jinyou; Wang, Pan; Tong, Limin; Pan, Anlian
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY Volume: 133 Issue: 7 2011, Pages: 2037-2039
Bandgap engineering of semiconductor nanowires is important in designing nanoscale optoelectronic devices.The research invented a moving-source thermal evaporation technique, and realized spatial bandgap engineering in single CdS1-xSex alloy nanowires with bandgap being modulated from 2.44 eV to 1.74 eV, promising new opportunities for nanowires in applications including broadband lighting and detection.