Spatial Bandgap Engineering along Single Alloy Nanowires

2012-03-26 Vistors:791

 

Gu, Fuxing;  Yang, Zongyin;  Yu, Huakang;  Xu, Jinyou;  Wang, Pan;  Tong, Limin;  Pan, Anlian
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY    Volume: 133   Issue: 7  2011,       Pages: 2037-2039 
 
Bandgap engineering of semiconductor nanowires is important in designing nanoscale optoelectronic devices.The research invented a moving-source thermal evaporation technique, and realized spatial bandgap engineering in single CdS1-xSex alloy nanowires with bandgap being modulated from 2.44 eV to 1.74 eV, promising new opportunities for nanowires in applications including broadband lighting and detection.

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