This project, led by Prof. Dai Daoxin from COSE, was supported by the NSFC International Cooperation and Exchange Program in 2023.The project aims to achieve wafer-level high-quality III-V direct heteroepitaxy on silicon with a new lateral aspect ratio trapping technology, low-loss thick-silicon photonic waveguides and effective mode manipulation as well as high-efficiency and low-reflectivity butt-coupling between the III-V active region and silicon photonic waveguides. Finally, this project will develop a new-generation tunable monolithic-integrated tunable III-V laser on silicon with a very large tuning range of ~100 nm and demonstrate an integrated optical system with the developed silicon/III-V laser. This project provides the key elements as the solid foundation for the future development of wafer-level large-scale silicon photonics.
